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t o - 2 2 0 f PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) 12 september 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description standard level n-channel mosfet in to220f (sot186a) package qualified to 175 c. this product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. features and benefits ? high efficiency due to low switching and conduction losses ? isolated package ? suitable for standard level gate drive 3. applications ? ac-to-dc power supply equipment ? motor control ? server power supplies ? synchronous rectification 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 60 v i d drain current t mb = 25 c; v gs = 10 v; fig. 1 [1] - - 75 a p tot total power dissipation t mb = 25 c; fig. 2 - - 55 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 12 - 3.25 4 m dynamic characteristics q gd gate-drain charge - 34.7 - nc q g(tot) total gate charge v gs = 10 v; i d = 25 a; v ds = 48 v; fig. 13 ; fig. 14 - 103 - nc avalanche ruggedness e ds(al)s non-repetitive drain- source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 75 a; v sup 60 v; r gs = 50 ; unclamped; fig. 3 - - 478 mj
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 2 / 13 [1] continuous current is limited by package 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 d drain 3 s source mb mounting base; isolated 3 2 1 m b to-220f (sot186a) s d g m b b 0 7 6 6. ordering information table 3. ordering information package type number name description version PSMN3R9-60XS to-220f plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead to-220 "full pack" sot186a 7. limiting values table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 60 v v dgr drain-gate voltage r gs = 20 k - 60 v v gs gate-source voltage -20 20 v v gs = 10 v; t mb = 100 c; fig. 1 - 56 a i d drain current v gs = 10 v; t mb = 25 c; fig. 1 [1] - 75 a i dm peak drain current pulsed; t p 10 s; t mb = 25 c; fig. 4 - 318 a p tot total power dissipation t mb = 25 c; fig. 2 - 55 w t stg storage temperature -55 175 c t j junction temperature -55 175 c t sld(m) peak soldering temperature - 260 c
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 3 / 13 symbol parameter conditions min max unit source-drain diode i s source current t mb = 25 c - 46 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 318 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 75 a; v sup 60 v; r gs = 50 ; unclamped; fig. 3 - 478 mj [1] continuous current is limited by package aaa-008785 0 25 50 75 100 125 150 175 200 0 25 50 75 100 t mb (c) i d i d (a) (a) (1) (1) (1) capped at 75a due to package fig. 1. continuous drain current as a function of mounting base temperature t m b ( c ) 0 2 0 0 1 5 0 5 0 1 0 0 0 3 a a 1 6 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 2. normalized total power dissipation as a function of mounting base temperature
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 4 / 13 aaa-008786 10 -2 10 -1 1 10 1 10 10 2 t al (ms) i al i al (a) (a) (1) (1) (2) (2) fig. 3. single pulse avalanche rating; avalanche current as a function of avalanche time aaa-008787 10 -1 1 10 10 2 10 -1 1 10 10 2 10 3 v ds (v) i d i d (a) (a) dc dc 100 ms 100 ms 10 ms 10 ms 1 ms 1 ms 100 us 100 us t p = 10 us t p = 10 us limit r dson = v ds / i d limit r dson = v ds / i d fig. 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 8. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 5 - 2.5 2.73 k/w r th(j-a) thermal resistance from junction to ambient vertical in free air - 55 - k/w
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 5 / 13 aaa-008788 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 2 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-mb) z th(j-mb) (k/w) (k/w) p t t p t t p = t single shot single shot = 0.5 = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 fig. 5. transient thermal impedance from junction to mounting base as a function of pulse duration 9. isolation characteristics table 6. isolation characteristics symbol parameter conditions min typ max unit c isol isolation capacitance [1] - 10 - pf v isol(rms) rms isolation voltage 50 hz f 60 hz; rh 65 %; sinusoidal waveform; clean and dust free - - 2500 v [1] f = 1 mhz 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = -55 c 54 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 60 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = 25 c; fig. 9 ; fig. 10 2.4 3 4 v i d = 1 ma; v ds = v gs ; t j = -55 c; fig. 9 - - 4.5 v v gsth gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = 175 c; fig. 9 1 - - v v ds = 60 v; v gs = 0 v; t j = 25 c - 0.07 1 a i dss drain leakage current v ds = 60 v; v gs = 0 v; t j = 175 c - - 500 a
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 6 / 13 symbol parameter conditions min typ max unit v gs = 20 v; v ds = 0 v; t j = 25 c - 2 100 na i gss gate leakage current v gs = -20 v; v ds = 0 v; t j = 25 c - 2 100 na v gs = 10 v; i d = 25 a; t j = 175 c; fig. 11 - - 8.7 m r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 12 - 3.25 4 m r g gate resistance f = 1 mhz - 0.71 - dynamic characteristics q g(tot) total gate charge - 103 - nc q gs gate-source charge - 25.1 - nc q gd gate-drain charge i d = 25 a; v ds = 48 v; v gs = 10 v; fig. 13 ; fig. 14 - 34.7 - nc c iss input capacitance - 5494 - pf c oss output capacitance - 743 - pf c rss reverse transfer capacitance v ds = 25 v; v gs = 0 v; f = 1 mhz; t j = 25 c; fig. 15 - 455 - pf t d(on) turn-on delay time - 30.6 - ns t r rise time - 71.2 - ns t d(off) turn-off delay time - 63.7 - ns t f fall time v ds = 30 v; r l = 1 ; v gs = 10 v; r g(ext) = 5 - 64.4 - ns source-drain diode v sd source-drain voltage i s = 10 a; v gs = 0 v; t j = 25 c; fig. 16 - 0.76 1.2 v t rr reverse recovery time - 40.5 - ns q r recovered charge i s = 25 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 30 v - 53 - nc
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 7 / 13 aaa-008789 0 0.5 1 1.5 2 0 60 120 180 240 300 v ds (v) i d i d (a) (a) 4.5 v 4.5 v 5 v 5 v v gs = 5.5 v v gs = 5.5 v 6 v 6 v 8 v 8 v 10 v 10 v fig. 6. output characteristics; drain current as a function of drain-source voltage; typical values aaa-008790 0 4 8 12 16 20 0 4 8 12 16 20 v gs (v) r dson r dson (m) (m) fig. 7. drain-source on-state resistance as a function of gate-source voltage; typical values aaa-008792 0 1 2 3 4 5 6 7 8 0 60 120 180 240 300 v gs (v) i d i d (a) (a) t j = 25c t j = 25c 150c 150c fig. 8. transfer characteristics; drain current as a function of gate-source voltage; typical values 0 0 3 a a h 0 2 7 0 1 2 3 4 5 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) v g s ( t h ) ( v ) m a x t y p m i n fig. 9. gate-source threshold voltage as a function of junction temperature
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 8 / 13 0 0 3 a a h 0 2 8 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 0 2 4 6 v g s ( v ) i d ( a ) m a x t y p m i n fig. 10. sub-threshold drain current as a function of gate-source voltage 0 0 3 a a g 8 1 4 0 0 . 6 1 . 2 1 . 8 2 . 4 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) a fig. 11. normalized drain-source on-state resistance factor as a function of junction temperature aaa-008793 0 60 120 180 240 300 0 2 4 6 8 10 i d (a) r dson r dson (m) (m) 5 v 5 v 5.5 v 5.5 v 6 v 6 v 8 v 8 v 10 v 10 v fig. 12. drain-source on-state resistance as a function of drain current; typical values 0 0 3 a a a 5 0 8 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 13. gate charge waveform definitions
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 9 / 13 0 0 3 a a h 4 0 2 0 2 4 6 8 1 0 0 4 0 8 0 1 2 0 q g ( n c ) v g s ( v ) v d s = 4 8 v 1 4 v fig. 14. gate-source voltage as a function of gate charge; typical values aaa-008795 10 -1 1 10 10 2 10 2 10 3 10 4 v ds (v) c c (pf) (pf) c iss c iss c oss c oss c rss c rss fig. 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values aaa-008796 0 0.3 0.6 0.9 1.2 1.5 1.8 0 60 120 180 240 300 v sd (v) i s i s (a) (a) t j = 25c t j = 25c 150c 150c fig. 16. source current as a function of source-drain voltage; typical values
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 10 / 13 11. package outline r e f e r e n c e s o u t l i n e v e r s i o n e u r o p e a n p r o j e c t i o n i s s u e d a t e i e c j e d e c j e i t a s o t 1 8 6 a 3 - l e a d t o - 2 2 0 f 0 5 1 0 m m s c a l e p l a s t i c s i n g l e - e n d e d p a c k a g e ; i s o l a t e d h e a t s i n k m o u n t e d ; 1 m o u n t i n g h o l e ; 3 - l e a d t o - 2 2 0 ' f u l l p a c k ' s o t 1 8 6 a a a 1 q c k j n o t e s 1 . t e r m i n a l d i m e n s i o n s w i t h i n t h i s z o n e a r e u n c o n t r o l l e d . 2 . b o t h r e c e s s e s a r e # 2 . 5 0 . 8 m a x . d e p t h d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 2 3 q e p t u n i t d b 1 d 1 e q q p l c l 2 ( 1 ) m a x . e 1 a 5 . 0 8 3 m m 4 . 6 4 . 0 a 1 2 . 9 2 . 5 b 0 . 9 0 . 7 1 . 1 0 . 9 b 2 1 . 4 1 . 0 0 . 7 0 . 4 1 5 . 8 1 5 . 2 6 . 5 6 . 3 e 1 0 . 3 9 . 7 2 . 5 4 1 4 . 4 1 3 . 5 t ( 2 ) 2 . 5 0 . 4 l 1 3 . 3 0 2 . 7 9 j 2 . 7 1 . 7 k 0 . 6 0 . 4 2 . 6 2 . 3 3 . 0 2 . 6 w 3 . 2 3 . 0 d i m e n s i o n s ( m m a r e t h e o r i g i n a l d i m e n s i o n s ) 0 2 - 0 4 - 0 9 0 6 - 0 2 - 1 4 m o u n t i n g b a s e fig. 17. package outline to-220f (sot186a)
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 11 / 13 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PSMN3R9-60XS n-channel 60 v, 4.0 m? standard level mosfet in to220f (sot186a) PSMN3R9-60XS all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 12 september 2013 13 / 13 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 isolation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp n.v. 2013. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 12 september 2013

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